Nano-scale island (dot)-induced optical emission in InGaN quantum wells

Thin InGaN layers were grown using metalorganic chemical vapor deposition a nd were characterized using atomic force microscopy and high-resolution tra nsmission electron microscopy. InGaN on GaN exhibits a Stranski-Krastanov g rowth mode, including a 2D wetting layer and 3D self-assembled quantum dots . We also observed that the InGaN nano-scale dots had a truncated cone shap e with {1-102} facets with respect to the (0002) surface. A visible spectra l range from UV to green was easily obtained by changing the InGaN quantum well thickness up to 2.3 nm.