Crystal structure and electrical properties of Pt/SrBi2Ta2O9/ZrO2/Si

We have investigated the metal-ferroelectric-insulator-semiconductor (MFIS) structure with strontium bismuth tantalate (SBT) as the ferroelectric thin film and ZrO2 as the insulating buffer layer. Sr0.8Bi2.4Ta2O9 thin films w ere prepared by using the metalorganic decomposition (MOD) method, and ZrO2 films were deposited using rf-sputtering. The memory windows of the MFIS s tructure were in the range of 0.3 similar to 2.6 V for gate voltages from 3 to 10 V. The maximum memory window was observed in the MFIS with a 28-nm-t hick ZrO2 layer. The auger electron spectroscopy (AES) depth profile and hi gh-resolution transmission electron microscopy of the SBT/ZrO2 (28 nm)/Si s tructure showed that the ZrO2 thin-film buffer layers prevented both the fo rmation of an interfacial layer and interdiffusion between SET and Si.