Effects of additives on microstructures and microwave dielectric properties of (Zr, Sn)TiO4 ceramics

Citation
Cl. Huang et al., Effects of additives on microstructures and microwave dielectric properties of (Zr, Sn)TiO4 ceramics, MATER CH PH, 71(1), 2001, pp. 17-22
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS CHEMISTRY AND PHYSICS
ISSN journal
02540584 → ACNP
Volume
71
Issue
1
Year of publication
2001
Pages
17 - 22
Database
ISI
SICI code
0254-0584(20010801)71:1<17:EOAOMA>2.0.ZU;2-7
Abstract
The effects of CuO, Bi2O3 and V2O5 additives (up to 3 wt.%) on the microstr uctures and the microwave dielectric properties of (Zr0.8Sn0.2)TiO4 ceramic s are investigated. The sintering temperature of (Zr0.8Sn0.2)TiO4 ceramics with CuO, Bi2O3 and V2O5 additions can be effectively reduced from 1400 to 1300 degreesC due to the liquid phase effects. The grain grows at lower sin tering temperatures (1300 degreesC) to 4.5-5.4 mum with CuO, Bi2O3 Or V2O5 additions. The dielectric constants (epsilon (r)) are not significantly aff ected by various additives and ranged in 36-38. Small values (< +/-3 ppm de greesC(-1)) of the temperature coefficient of resonant frequency (tau (f)) are obtained for (Zr0.8Sn0.2)TiO4 ceramics with additives. However, the unl oaded quality factors Q x f are strongly dependent upon the type and the am ount of additives. (C) 2001 Elsevier Science B.V. All rights reserved.