Studies on large area (similar to 50 cm(2)) MoS2 thin films deposited using successive ionic layer adsorption and reaction (SILAR) method

Citation
Sd. Sartale et Cd. Lokhande, Studies on large area (similar to 50 cm(2)) MoS2 thin films deposited using successive ionic layer adsorption and reaction (SILAR) method, MATER CH PH, 71(1), 2001, pp. 94-97
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS CHEMISTRY AND PHYSICS
ISSN journal
02540584 → ACNP
Volume
71
Issue
1
Year of publication
2001
Pages
94 - 97
Database
ISI
SICI code
0254-0584(20010801)71:1<94:SOLA(T>2.0.ZU;2-6
Abstract
A simple method, successive ionic layer adsorption and reaction (SILAR), ha s been used to deposit MoS2 thin films onto various substrates using ammoni um molybdate and sodium sulfide as cation and anion precursor solutions, re spectively. Preparative parameters such as concentration, pH and temperatur e of cation and anion precursor solutions and adsorption, reaction and rins ing time durations were optimized to gee good quality films. The firms were deposited onto microsolide glass, fluorine doped tin oxide (FTO) coated gl ass and Si (1 1 1)wafer substrates. The versatility of the method was check ed by depositing the films onto (similar to 50 cm(2)) glass substrates. X-r ay diffraction, optical absorption, electrical resistivity and thermoemf me asurement techniques were used for characterization of the films. (C) 2001 Elsevier Science B.V All rights reserved.