High temperature transport property of B- and P-doped GeSi single crystalsprepared by a Czochralski method

B-doped (p-type) and P-doped (n-type) Ge0.07Si0.93 single crystals were pre pared by a Czochralski (CZ) method. The anisotropy of Seebeck coefficient ( cr), electrical conductivity (a) and thermal conductivity (kappa) among the [001], [110] and [111] directions was determined and the values were compa red with those of polycrystalline materials. The Seebeck coefficient of B-d oped specimen in the [111] direction (alpha (111)) was the same as that in the [110] direction (alpha (110)), and was greater than that in the [001] d irection (alpha 001) measured at all temperature. The alpha (111), alpha (1 10) and alpha (100) of the P-doped specimens were in agreement above 600 K, but anisotropy of alpha values was observed below 500 K, (\alpha 001\ > \a lpha (111)\ > \alpha (110)\) No anisotropy of sigma and kappa was observed in both B- and P-doped specimens. The thermal conductivity of B- and P-dope d single crystal specimens were much greater than that of polycrystalline m aterials.