Model of charge carriers thermalization in organic semiconductors

The study of the process of electric charge carrier thermalization in molec ular semiconductors is presented. For the strong interaction of the photoge neration center with its neighbors the direction of the initial velocity of the charge carrier is independent on the incident light parameters. In the case of weak interaction the initial velocity of the charge carrier is alm ost perpendicular to the direction of light propagation. The thermalization process is described by Langivin equations. The strength of the photogener ation center interaction with neighbors determines the thermalization lengt h dependence on the ambient temperature and the frequency of the incident l ight beam. Comparisons with experimental results are presented.