The RD48 (ROSE) collaboration has succeeded to develop radiation hard silic
on detectors. capable to withstand the harsh hadron fluences in the trackin
g areas of LHC experiments. In order to reach this objective, a defect engi
neering technique was employed resulting in the development of Oxygen enric
hed FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2 x 10(
17) O/cm(3) in the normal detector processing. Systematic investigations ha
ve been carried out on various standard and oxygenated silicon diodes with
neutron, proton and pion irradiation up to a fluence of 5 x 10(14)cm(-2) (1
MeV neutron equivalent). Major focus is on the changes of the effective do
ping concentration (depletion voltage). Other aspects (reverse current, cha
rge collection) are covered too and the appreciable benefits obtained with
DOFZ silicon in radiation tolerance for charged hadrons are outlined. The r
esults are reliably described by the "Hamburg model": its application to LH
C experimental conditions is shown, demonstrating the superiority of the de
fect engineered silicon. Microscopic aspects of damage effects are also dis
cussed. including differences due to charged and neutral hadron irradiation
. (C) 2001 Elsevier Science B.V. All rights reserved.