A comparative study of oxygenated and non-oxygenated Si pad diodes, miniature and large area microstrip detectors

Large area and miniature microstrip detectors were processed by Micron Semi conductor Ltd on oxygenated silicon and non-oxygenated material. The pre-ir radiation and post-irradiation IV and inter-strip capacitance values all ag ree between the control devices and those with enhanced oxygen. After irrad iation, the capacitance-voltage (CV) derived depletion voltage for the oxyg enated detector is lower than that for the control device. However, the dif ference appears less marked than is typically seen with diodes. The charge collection properties were studied with 1064 nm laser and minimum ionising electrons (m.i.p.'s) from a Ru-106 source, With a good agreement between li ght-spot and source data. We found evidence for improvement in oxygenated d etectors from this run with this supplier but again, not as pronounced as m ight be expected from the diode studies. (C) 2001 Elsevier Science B.V. All rights reserved.