Silicon carbide: fundamentals

Authors
Iwami, M
Citation
M. Iwami, Silicon carbide: fundamentals, NUCL INST A, 466(2), 2001, pp. 406-411
Citations number
22
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
466
Issue
2
Year of publication
2001
Pages
406 - 411
Database
ISI
SICI code
0168-9002(20010701)466:2<406:SCF>2.0.ZU;2-E
Abstract
Fundamental issues of silicon carbide, i.e., characteristics. crystal growt h, doping of impurity atoms, metal-SiC contacts. electronic devices, etc., are given. Applications for the detection of energetic particles art: also shown, (C) 2001 Elsevier Science B.V. All rights reserved.