Estimation of the electronic straggling using delta-doped multilayers

It is proposed that the electronic straggling of projectile ion beams for m edium energy ion scattering spectroscopy (MEIS) can be estimated with delta -doped multilayers. From the depth dependence of the full width half maximu m (FWHM) of the Ta peak of a Ta delta-doped Si multilayer, the electronic s traggling of 100 keV H+ in Si could be estimated. The electronic straggling can be estimated without information on the exact thickness and the interf ace abruptness of the Ta delta-doped multilayers. The reduced electronic st raggling, Omega (e)/Omega (B) was estimated to be 0.59. With the experiment ally determined electronic straggling, the thickness of the Ta delta layer could be estimated and compared with the nominal thickness based on the gro wth rate determined by transmission electron microscopy (TEM). (C) 2001 Els evier Science B.V. All rights reserved.