Layer-resolved depth profiling at single crystal surfaces

Citation
Bw. Busch et al., Layer-resolved depth profiling at single crystal surfaces, NUCL INST B, 183(1-2), 2001, pp. 88-96
Citations number
33
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
183
Issue
1-2
Year of publication
2001
Pages
88 - 96
Database
ISI
SICI code
0168-583X(200107)183:1-2<88:LDPASC>2.0.ZU;2-V
Abstract
The stopping power and straggling of ions in channeling and blocking direct ions depend on multiple scattering and impact parameter dependent effects. Therefore. the extraction of high-resolution depth profiles of single cryst als based on simulation of the energy spectra obtained from medium-energy i on scattering (MEIS) is not straightforward. An alternative is to analyze t he MEIS angular (blocking) scattering yields from several angular configura tions. We have applied this technique to obtain laver resolved depth profil es in a dilute substitutional alloy, Fe-9 wt% W (1 0 0). and in an alloy wi th a small mass difference between the base metals. Fe-15 wt% Cr (100). As a result, layer-resolved depth profiling combined with conventional MEIS st ructural analysis allowed a detailed study of surface segregation phenomena in these systems. (C) 2001 Elsevier Science B.V. All rights reserved.