Diode pumped Nd : YVO4 laser at 1.34 mu m Q-switched and made locked by a V3+: YAG saturable absorber

Authors
Agnesi, A Guandalini, A Reali, G Jabczynski, JK Kopczynski, K Mierczyk, Z
Citation
A. Agnesi et al., Diode pumped Nd : YVO4 laser at 1.34 mu m Q-switched and made locked by a V3+: YAG saturable absorber, OPT COMMUN, 194(4-6), 2001, pp. 429-433
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
OPTICS COMMUNICATIONS
ISSN journal
00304018 → ACNP
Volume
194
Issue
4-6
Year of publication
2001
Pages
429 - 433
Database
ISI
SICI code
0030-4018(20010715)194:4-6<429:DPN:YL>2.0.ZU;2-3
Abstract
A diode-pumped Nd:YVO4 laser passively Q-switched and mode locked by V3+:YA G generates as much as 505-mW average power at 1342 nm (30% of the cw outpu t) in trains of sub-nanosecond pulses with energy as high as 0.7 muJ and re petition rates in the range 10-50 kHz. (C) 2001 Elsevier Science B.V. All r ights reserved.