Monte Carlo simulations combined with the embedded-atom method potential ha
ve been employed to investigate the microscopic process of the Sigma5 tilt
grain boundary sliding in aluminum. We have studied the atomic structures a
nd the grain boundary sliding/migration energy profile at elevated temperat
ures in the absence or presence of vacancies. The annealing temperature is
found to play an important role in determining the grain boundary energetic
s and mobility. Contrary to "static" simulations, the simulated annealing (
SA) produces new lower energy states of the complex and low-symmetry grain
boundary structure. The vacancy formation energy at the first layer from th
e interface is found to be significantly lower than that at the other layer
s and the bulk. On the other hand, the vacancy at the interface has a signi
ficantly higher formation energy compared to bulk, in very good agreement w
ith recent ab initio electronic-structure calculations. For both "static" a
nd SA simulations, the grain boundary sliding energy profile is smooth, exh
ibiting several energy peaks and valleys, where the latter are associated w
ith grain boundary migration. The SA scheme reduces the grain boundary slid
ing/migration energy barrier by about a factor of 3 and increases the rate
of migrations. The distribution of atomic energies helps identify the atoms
that play a key role in the grain boundary sliding and migration. The grai
n boundary sliding energy profile in the presence of a vacancy placed at th
e first layer is very similar to that of the clean boundary, while the vaca
ncy at the interface increases the grain boundary energy and leads to no mi
gration.