Magnetic properties of the frustrated antiferromagnetic spinel ZnCr2O4 andthe spin-glass Zn1-xCdxCr2O4 (x=0.05,0.10) - art. no. 024408

Citation
H. Martinho et al., Magnetic properties of the frustrated antiferromagnetic spinel ZnCr2O4 andthe spin-glass Zn1-xCdxCr2O4 (x=0.05,0.10) - art. no. 024408, PHYS REV B, 6402(2), 2001, pp. 4408
Citations number
30
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6402
Issue
2
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010701)6402:2<4408:MPOTFA>2.0.ZU;2-Z
Abstract
The T dependence (2-400 K) of the electron paramagnetic resonance (EPR). ma gnetic susceptibility chi (T), and specific heat C-v(T) of the normal antif erromagnetic (AFM) spinel ZnCr2O4 and the spin-glass (SG) Zn1-xCdxCr2O4 (x = 0.05.0.10) are reported. These systems behave as a strongly frustrated AF M and SG with T(N)approximate toT(G)approximate to 12 K and -400 K greater than or similar to Theta (CW)greater than or similar to -500 K. At high-ir the EPR intensity follows the chi (T) and the g value is T independent. The linewidth broadens as the temperature is lowered, suggesting the existence of short range AFM correlations in the paramagnetic phase. For ZnCr2O4 the EPR intensity and chi (T) decreases below 90 and 50 K, respectively. These results are discussed in terms of both nearest-neighbor Cr3+ (S=3/2) spin- coupled pairs and spin-coupled tetrahedral clusters with an exchange coupli ng of \J/k\ approximate to 35-45 K. The appearance of small resonance modes for T less than or similar to 17 K. the observation of a sharp drop in chi (T) and a strong peak in C-v(T) at T-N=12 K confirms, as previously report ed, the existence of long range AFM correlations in the low-T phase. A comp arison with recent neutron diffraction experiments, that found a near dispe rsionless excitation at 4.5 meV for T less than or similar toT(N) and a con tinuous gapless spectrum for T greater than or similar toT(N), is also give n.