This Letter reports detailed measurements of the dissipation times tau (d)
of similar to 10 meV intersubband (ISB) plasmons, and of the (single-partic
le) transport lifetimes tau (mu), in a remotely doped 40 nm GaAs quantum we
ll. Introduced here as the time for ISB plasmons to dissipate into other mo
des of the electron gas, tau (d) is deduced from the homogeneous ISB absorp
tion Linewidth, measured as a function of sheet concentration and perpendic
ular de electric field. Modeling in this and the next Letter [C. A. Ullrich
and G. Vignale, Phys. Rev. Lett. 87, 037402 (2001)] indicates that scatter
ing from rough interfaces dominates rd, while scattering from ionized impur
ities dominates tau (mu).