Anisotropic silicon trenches 300-500 mu m deep employing time multiplexed deep etching (TMDE)

This paper reports solutions to the problem of profile control of narrow tr enches in the vicinity of wider topographic features, as well as for etchin g high aspect ratio, anisotropic trenches with depths in the 300-500 mum ra nge, and of widths between 12 to 18 mum. Additionally, specific operating c onditions are discussed to address uniformity variations across dies with d iameters in excess of 4200 mum. (C) 2001 Elsevier Science B.V. All rights r eserved.