TIME-RESOLVED PHOTOLUMINESCENCE STUDIES OF INGAN GAN SINGLE-QUANTUM-WELLS AT ROOM-TEMPERATURE/

We present a room-temperature study of the well-width-dependent carrie r lifetimes in InGaN single-quantum wells. At room temperature, carrie r recombination was found to be dominated by interface-related nonradi ative processes. The dominant radiative recombination at room temperat ure was through band-to-band free carriers. For the sample grown at a higher growth rate, we observed a longer luminescence lifetime, which was attributed to an improved quantum well interface. (C) 1997 America n Institute of Physics.