Ck. Sun et al., TIME-RESOLVED PHOTOLUMINESCENCE STUDIES OF INGAN GAN SINGLE-QUANTUM-WELLS AT ROOM-TEMPERATURE/, Applied physics letters, 71(4), 1997, pp. 425-427
We present a room-temperature study of the well-width-dependent carrie
r lifetimes in InGaN single-quantum wells. At room temperature, carrie
r recombination was found to be dominated by interface-related nonradi
ative processes. The dominant radiative recombination at room temperat
ure was through band-to-band free carriers. For the sample grown at a
higher growth rate, we observed a longer luminescence lifetime, which
was attributed to an improved quantum well interface. (C) 1997 America
n Institute of Physics.