Since diamond can be used as both the substrate and the active medium in el
ectronic devices, it is very important to obtain information concerning the
temperature variations in the immediate vicinity of active elements and th
e conditions of heat removal from such elements. This task is solved by a b
olometer built into a diamond plate, which is capable of measuring temperat
ure increments induced by laser pulses in the diamond or in the diamond-sup
ported surface structures. The bolometer, representing a buried graphitized
layer formed by helium ion implantation with subsequent annealing, has a c
haracteristic response time of similar to 10 ns. (C) 2001 MAIK "Nauka/Inter
periodica".