Solid-state reactions in TiBx-GaAs contact structures upon rapid thermal annealing

Authors
Milenin, VV Konakova, RV
Citation
Vv. Milenin et Rv. Konakova, Solid-state reactions in TiBx-GaAs contact structures upon rapid thermal annealing, TECH PHYS L, 27(7), 2001, pp. 586-588
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
27
Issue
7
Year of publication
2001
Pages
586 - 588
Database
ISI
SICI code
1063-7850(2001)27:7<586:SRITCS>2.0.ZU;2-5
Abstract
Solid-state phase reactions in the initial and vacuum-annealed (T = 500 deg reesC, 1 h) TiBx-GaAs junctions were studied. Thermal treatment of the samp les leads to changes in a transition layer structure, with the formation of BxGa1-xAs and TixGa1-xAs ternary phases. A physical mechanism explaining t hese structural transformations is proposed. (C) 2001 MAIK "Nauka/Interperi odica".