Ultimate InAsSbP solid solutions for 2.6-2.8-mu m LEDs

Authors
Romanov, VV Ivanov, EV Imenkov, AN Kolchanova, NM Moiseev, KD Stoyanov, ND Yakovlev, YP
Citation
Vv. Romanov et al., Ultimate InAsSbP solid solutions for 2.6-2.8-mu m LEDs, TECH PHYS L, 27(7), 2001, pp. 611-614
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
27
Issue
7
Year of publication
2001
Pages
611 - 614
Database
ISI
SICI code
1063-7850(2001)27:7<611:UISSF2>2.0.ZU;2-C
Abstract
Epitaxial layers of phosphorus-rich InAs1-y- xSbyPx solid solutions were ob tained by liquid phase epitaxy (LPE). The films with x = 0.32 were grown at 575 degreesC on isoperiodic (100)InAs substrates. It is shown that the gro wth of InAsSbP layers from a phosphorus-rich liquid phase is accompanied by saturation of the phosphorus content in the solid state. InAsSbP-based dio de heterostructures emitting in the 2.6-2.8 mum wavelength range were obtai ned, the output emission power of which is sufficient for detecting both na tural and industrial gases in the atmosphere. (C) 2001 MAIK "Nauka/Interper iodica".