THERMAL-STABILITY OF IR POLYCRYSTALLINE-SI STRUCTURE FOR BOTTOM ELECTRODE OF INTEGRATED FERROELECTRIC CAPACITORS/

Authors
JEON YC SEON JM JOO JH OH KY ROH JS KIM JJ KIM DS
Citation
Yc. Jeon et al., THERMAL-STABILITY OF IR POLYCRYSTALLINE-SI STRUCTURE FOR BOTTOM ELECTRODE OF INTEGRATED FERROELECTRIC CAPACITORS/, Applied physics letters, 71(4), 1997, pp. 467-469
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
71
Issue
4
Year of publication
1997
Pages
467 - 469
Database
ISI
SICI code
0003-6951(1997)71:4<467:TOIPSF>2.0.ZU;2-3
Abstract
Ir films deposited on polycrystalline silicon (poly-Si), with and with out barrier layer, were annealed and the thermal stability was investi gated to check the feasibility of the structure for bottom electrode o f integrated ferroelectric capacitors. Ir did not form silicide up to 700 degrees C and did not get oxidized up to 550 degrees C. It was fou nd that Ir prevented diffusion of oxygen through it when annealed at 7 00 degrees C. Ir/poly-Si is believed to be most promising for bottom e lectrode structure from the results. (C) 1997 American Institute of Ph ysics.