High rate deposition of TiO2 by DC sputtering of the TiO2-x target

Authors
Ohsaki, H Tachibana, Y Mitsui, A Kamiyama, T Hayashi, Y
Citation
H. Ohsaki et al., High rate deposition of TiO2 by DC sputtering of the TiO2-x target, THIN SOL FI, 392(2), 2001, pp. 169-173
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
392
Issue
2
Year of publication
2001
Pages
169 - 173
Database
ISI
SICI code
0040-6090(20010730)392:2<169:HRDOTB>2.0.ZU;2-6
Abstract
A new sputter method for high rate deposition of TiO2 was developed for app lication to the common planar magnetron sputter system. In this method, DC power is applied to plasma sprayed TiO2-x targets using a sputter gas of a few percent of O-2 diluted with Ar and then TiO2 films are deposited with a high deposition rate (eight times higher than that by the conventional met hod) and a good uniformity of thickness and refractive-index distribution. (C) 2001 Elsevier Science B.V. All rights reserved.