HIGH-VOLTAGE GAINP GABS DUAL-MATERIAL SCHOTTKY RECTIFIERS/

A dual-material structure of lattice-matched GaInP on GaAs has a calcu lated figure of merit which is approximately 60 times better than Si a nd 5 times better than GaAs. In this work, the theoretical performance of the GaInP/GaAs structure is presented and experimental data for Ni on GaInP/GaAs Schottky rectifiers is presented, The Ni on GaInP/GaAs Schottky rectifiers have a breakdown voltage of similar to 80 V and lo w reverse leakage current. Comparable Ni on GaAs Schottky rectifiers h ave a breakdown voltage of similar to 20 V and significantly higher re verse leakage current. The GaInP/GaAs rectifiers' forward characterist ics have a current-voltage extracted phi(Bn), of 1.0 eV with an ideali ty factor of 1.06. This dual-material structure of GaInP/GaAs appears to be a promising candidate for improving power device performance. (C ) 1997 American Institute of Physics.