Upscaling of texture-etched zinc oxide substrates for silicon thin film solar cells

Citation
J. Muller et al., Upscaling of texture-etched zinc oxide substrates for silicon thin film solar cells, THIN SOL FI, 392(2), 2001, pp. 327-333
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
392
Issue
2
Year of publication
2001
Pages
327 - 333
Database
ISI
SICI code
0040-6090(20010730)392:2<327:UOTZOS>2.0.ZU;2-U
Abstract
Large area (320 x 400 mm(2)) glass/ZnO-films were prepared by high-rate d.c . magnetron sputtering from ceramic targets and compared to lab-type r.f.- and m.f.-sputtered ZnO. The very uniform and initially smooth films exhibit excellent electrical and optical properties (resistivity less than or equa l to 5 X 10(-4) Ohm cm, transmission > 80% for visible light and 1500-nm th ick films). Upon etching in diluted hydrochloric acid they develop a surfac e texture. Independent of sputter technique (d.c. or r.f.) and substrate si ze, higher substrate temperatures and lower sputter gas pressures have a si milar influence on the film structure and lead to more robust and etch-resi stant films. Showing excellent light scattering properties, amorphous silic on pin solar cells prepared on these large area glass/ZnO samples exhibit i nitial efficiencies up to 9.2%, proving the viability of sputtered and text ure-etched ZnO as TCO-substrate for industrial solar module production. (C) 2001 Elsevier Science B.V. All rights reserved.