Backward propagated capacitance model for register transfer level power estimation

Citation
Jy. Choi et al., Backward propagated capacitance model for register transfer level power estimation, VLSI DESIGN, 12(2), 2001, pp. 221-231
Citations number
24
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
VLSI DESIGN
ISSN journal
1065514X → ACNP
Volume
12
Issue
2
Year of publication
2001
Pages
221 - 231
Database
ISI
SICI code
1065-514X(2001)12:2<221:BPCMFR>2.0.ZU;2-Y
Abstract
We present a new approach to the power modeling of functional modules, refe rred to as the backward propagated capacitance model, for estimating the po wer consumption of VLSI systems that are described at the register transfer level (RTL). To construct the proposed model, we investigate the effect of the module's internal capacitance on power consumption at the gate level. Then, we store the effect in a library in terms of the equivalent input cap acitance of the module. The equivalent input capacitance is used to compute the module's power without the lower level elaboration during the power an alysis of the RTL system. In the experiment using benchmark functional modu les, the proposed model showed the absolute modeling error of 1.39% on aver age. For the benchmark RTL systems, the proposed model exhibited the absolu te error of 3.04% in power estimation on average. If signal characteristics deviate from the modeling condition, the modeling error may increase. Expe rimental results show that the modeling accuracy can be improved greatly by using a simple compensation method.