Electron-stimulated surface stress relaxation of Si

We have observed the nonthermal relaxation of surface stress in Si induced by electron irradiation at room temperature. An atomically thin disordered layer was introduced by Ar ion bombardment. The surface stress change durin g ion bombardment and the following electron irradiation of Si(100) was mea sured by means of an optical microcantilever technique. We have found that the compressive stress in the Si surface due to disorder induced by ion bom bardment was completely relaxed by electron irradiation at low energy. The criterion for complete relaxation is found not to be total energy depositio n, but the number of irradiated electrons. (C) 2001 American Institute of P hysics.