Control of the colossal magnetoresistance by strain effect in Nd0.5Ca0.5MnO3 thin films

Citation
Er. Buzin et al., Control of the colossal magnetoresistance by strain effect in Nd0.5Ca0.5MnO3 thin films, APPL PHYS L, 79(5), 2001, pp. 647-649
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
79
Issue
5
Year of publication
2001
Pages
647 - 649
Database
ISI
SICI code
0003-6951(20010730)79:5<647:COTCMB>2.0.ZU;2-G
Abstract
Thin films of Nd0.5Ca0.5MnO3 manganites with colossal magnetoresistance (CM R) properties have been synthesized by the pulsed-laser deposition techniqu e on (100)-(SrTiO3). The lattice parameters of these manganites and correla tively their CMR properties can be controlled by the substrate temperature T-S. The maximum CMR effect at 50 K, calculated as the ratio rho (H=0T)/rho (H=7T) is 10(11) for a deposition temperature of T-S=680 degreesC. Structu ral studies show that the Nd0.5Ca0.5MnO3 film is single phase, [010]-orient ed and has a pseudocubic symmetry of the perovskite subcell with a=3.77 Ang strom at room temperature. We suggest that correlation between lattice para meters, CMR, and substrate temperature T-S result mainly from substrate-ind uced strains which can weaken the charge-ordered state at low temperature. (C) 2001 American Institute of Physics.