The roles of argon addition in the hot filament chemical vapor deposition system

Citation
Yf. Zhang et al., The roles of argon addition in the hot filament chemical vapor deposition system, DIAM RELAT, 10(8), 2001, pp. 1523-1527
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
09259635 → ACNP
Volume
10
Issue
8
Year of publication
2001
Pages
1523 - 1527
Database
ISI
SICI code
0925-9635(200108)10:8<1523:TROAAI>2.0.ZU;2-9
Abstract
Nano-crystalline diamond films were successfully deposited using CH4/H-2/Ar gas mixture by hot filament chemical vapor deposition (HFCVD) method. The characterizations of the as-grown films are carried out by using field emis sion scanning electron microscopy (FE-SEM) and high-resolution transmission electron microscopy (HR-TEM). The results show that the film consists of n ano-crystalline diamond grains with sizes ranging from 4 to 30 nm. High ren ucleation rates are found and attributed to the formation of these nano-dia mond grains. The roles that Ar plays in HFCVD system are discussed. (C) 200 1 Elsevier Science B.V. All rights reserved.