Mechanism of mechanical and chemical polishing in low dielectric constant plasma-enhanced chemical vapor deposition SiOC layer from hexamethyldisiloxane

Authors
Hara, T Togoh, F Kurosu, T Sakamoto, K Shioya, Y Ishimaru, T Doy, TK
Citation
T. Hara et al., Mechanism of mechanical and chemical polishing in low dielectric constant plasma-enhanced chemical vapor deposition SiOC layer from hexamethyldisiloxane, EL SOLID ST, 4(8), 2001, pp. G65-G67
Citations number
4
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHEMICAL AND SOLID STATE LETTERS
ISSN journal
10990062 → ACNP
Volume
4
Issue
8
Year of publication
2001
Pages
G65 - G67
Database
ISI
SICI code
1099-0062(200108)4:8<G65:MOMACP>2.0.ZU;2-D
Abstract
Polishing and the polishing mechanism are studied for low dielectric consta nt SiOC layer deposited by plasma-enhanced chemical vapor deposition (PECVD ). Hardness changed from 4.6 to 13.4 GPa with varying carbon content from 0 .35 to 0.50. Good barrier performance was attained for the copper diffusion in layers with carbon contents above 0.35 when annealed at 400 degreesC. R emoval rate in mechanical polishing decreased, inversely proportional to th e hardness as given theoretically. However, removal rate was weakly depende nt an the hardness in the chemical polishing by the MnO2 slurry. Higher rem oval rate is fulfilled by this chemical polishing. (C) 2001 The Electrochem ical Society.