RESURF AlGaN/GaN HEMT for high voltage power switching

Authors
Karmalkar, S Deng, JY Shur, MS Gaska, R
Citation
S. Karmalkar et al., RESURF AlGaN/GaN HEMT for high voltage power switching, IEEE ELEC D, 22(8), 2001, pp. 373-375
Citations number
12
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
22
Issue
8
Year of publication
2001
Pages
373 - 375
Database
ISI
SICI code
0741-3106(200108)22:8<373:RAHFHV>2.0.ZU;2-G
Abstract
A novel HEMT configuration based on the RESURF technique is proposed for ve ry high voltage power switching applications. It employs a p-n junction bel ow the 2-DEG channel and two field plates, one extending from the gate and the other from the drain, to distribute the electric field over the gate to drain separation. 2-D simulations indicate a breakdown voltage >1 KV at on -resistance of similar to1 m Omega -cm(2) (neglecting contact resistances) for the device.