Model of low frequency noise in polycrystalline silicon thin-film transistors

Authors
Dimitriadis, CA Kamarinos, G Brini, J
Citation
Ca. Dimitriadis et al., Model of low frequency noise in polycrystalline silicon thin-film transistors, IEEE ELEC D, 22(8), 2001, pp. 381-383
Citations number
10
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE ELECTRON DEVICE LETTERS
ISSN journal
07413106 → ACNP
Volume
22
Issue
8
Year of publication
2001
Pages
381 - 383
Database
ISI
SICI code
0741-3106(200108)22:8<381:MOLFNI>2.0.ZU;2-7
Abstract
A model for the low frequency noise of polycrystalline silicon thin film tr ansistors (polysilicon TFTs) is proposed. The model takes into account fluc tuations of the grain boundary potential barrier induced by those of the gr ain boundary interface charge and fluctuations of carriers due to trapping in oxide traps located close to the interface. Using the proposed model, it is demonstrated that both grain boundary and oxide taps can be determined in polysilicon TFTs from noise measurements.