High quality thermal oxide on LPSOI formed by high temperature enhanced MILC

The characteristics of thermal polyoxide grown on large-grain polysilicon-o n-insulator (LPSOI) formed by high temperature enhanced metal-induced-later al-crystallization (MILC) have been investigated. Compared with conventiona l polysilicon films, LPSOI films have reduced surface roughness and a small er number of grain boundaries. The improved polysilicon quality leads to be tter thermal oxide quality, especially at device dimensions that are smalle r than the grain size. Intrinsic oxide characteristics such as breakdown vo ltage, leakage current and charge-to-breakdown value have been experimental ly measured. Significant improvement in both oxide quality and device-to-de vice variation is reported.