High quality gate dielectrics grown by rapid thermal processing using split-N2O technique on strained-Si0.91Ge0.09 films

Thermal stability and strain relaxation temperature of strained Si0.91Ge0.0 9 layer has been investigated using double crystal x-ray diffraction (DCXRD ), High quality gate oxynitride layers rapid thermally grown on strained Si 0.91Ge0.09 using N2O and split N2O cycle technique below strained relaxed t emperature is reported, A positive fixed oxide charge density was observed for N2O and split-N2O grown films. The O-2 grown films exhibit a negative f ixed oxide charge. The excellent improvements in the leakage current, break down field and charge-to-breakdown value of the N2O or split-N2O grown film s were achieved compared to pure O-2 grown films.