Pi-gate SOI MOSFET

This paper describes computer simulations of various SOI MOSFETs with doubl e and triple gate structures, as well as gate-all-around devices. The conce pt of a triple-gate device with sidewalls extending into the buried oxide t hereby called a "II-gate" or "Pi-gate" MOSFET) is introduced. The proposed device is simple to manufacture and offers electrical characteristics simil ar to the much harder to fabricate gate-all-around MOSFET.