IN-SITU OBSERVATION OF ANODIC-DISSOLUTION PROCESS OF P-GAAS(001) IN HCL SOLUTION BY SURFACE X-RAY-DIFFRACTION

Authors
UOSAKI K KOINUMA M KONDO T YE S YAGI I NOGUCHI H TAMURA K TAKESHITA K MATSUSHITA T
Citation
K. Uosaki et al., IN-SITU OBSERVATION OF ANODIC-DISSOLUTION PROCESS OF P-GAAS(001) IN HCL SOLUTION BY SURFACE X-RAY-DIFFRACTION, Journal of electroanalytical chemistry [1992], 429(1-2), 1997, pp. 13-17
Citations number
33
Categorie Soggetti
Electrochemistry,"Chemistry Analytical
Journal title
Journal of electroanalytical chemistry [1992]
ISSN journal
15726657 → ACNP
Volume
429
Issue
1-2
Year of publication
1997
Pages
13 - 17
Database
ISI
SICI code
Abstract
The grazing incidence X-ray diffraction technique has been applied to monitor the anodic dissolution process of GaAs(001) in 0.1M HCl soluti on. The surface diffraction intensity for the [11] direction of GaAs(0 01) was clearly observed and it decreased with time when the positive potential was applied to the electrode. (C) 1997 Elsevier Science S.A.