Inversion charge modeling

A simple, implicit, relation for the inversion charge density in the channe l of metal oxide semiconductor (MOS) transistors is presented. The relation is continuous and covers the whole operating range, from subthreshold to s trong inversion. The derivative of the local inversion charge density with respect to the channel voltage is a simple expression in the charge density , leading to analytic integrals as required for obtaining the drain current and the capacitance coefficients.