Improved low temperature characteristics of p-channel MOSFETs with Si1-xGex raised source and drain

P-channel metal-oxide-semiconductor field-effect transistors with Si1-xGex raised source and drain (RSD) have been fabricated and further studied for low temperature applications. The Si1-xGex RSD layer was selectively grown by ANELVA. SRE-612 ultra-high vacuum chemical vapor deposition (UHVCVD) sys tem, Compared to devices with conventional Si RSD, improved transconductanc e and specific contact resistance were obtained, and these improvements bec ome even more dramatic with reducing channel length, Well-behaved short cha nnel characteristics with reduced drain-induced barrier lowering (DIBL) and off-state leakage current are demonstrated on devices with 100 nm Si1-xGex RSD, due to the resultant shallow junction and less implantation damage. M oreover, temperature measurements reveal that Si1-xGex RSD devices show mor e dramatic improvement in device performance at low temperature (-50 degree sC) operation, which can be ascribed to the higher temperature sensitivity of the Si1-xGex sheet resistance.