High drive-current electrically induced body dynamic threshold SOI MOSFET (EIB-DTMOS) with large body effect and low threshold voltage

A novel electrically induced body dynamic threshold metal oxide semiconduct or (EIB-DTMOS) is proposed where the body is electrically induced by substr ate bias and its high performance is demonstrated by experiments and simula tions. EIB-DTMOS achieves a large body effect and a low V-th at the same ti me. The upper limit of the supply voltage of the EIB-DTMOS is higher than t hat of a conventional DTMOS, because the forward biased p-n junction leakag e current of the EIB-DTMOS is lower. Among several DTMOSs, the accumulation mode EIB-DTMOS shows the highest drive-current at fixed off-current due to a large V-th shift (or large back gate capacitance) and a suppressed short channel effect.