DC-gate-bias stressing of a-Si : H TFTs fabricated at 150 degrees C on polyimide foil

We investigated the electrical stability of a-Si:H TFTs with mobilities of similar to0.7 cm(2)/Vs fabricated on 51 mum thick polyimide foil at 150 deg reesC, Positive gate voltage V-g ranging from 20 to 80 V was used in the bi as stress experiments conducted at room temperature. The bias stressing cau sed an increase in threshold voltage and subthreshold slope, acid minor dec rease in mobility. Annealing in forming gas substantially improved the stab ility of the TFTs, The threshold voltage shift exhibited a power law time d ependence with the exponent gamma depending on the gate bias V-g. For V-g = 20 Y, gamma = 0.45, while for V-g = 80 V, gamma = 0.27, The threshold volt age shift also exhibited a power law dependence on V-g with the exponent be ta depending slightly on stress duration. beta = 2.1 for t = 100 sec and 1. 7 for t = 5000 s, These values fall into the range experimentally observed for a-Si:H TFTs fabricated at the standard temperatures of 250-350 degreesC .