A rigorous model for metal-insulator-semiconductor (MIS) interconnects is p
resented based on device level simulation results. At the device level, the
motion equations of charged carriers and Maxwell's equations are simultane
ously solved using a finite element scheme and Newton's method, Simulations
provide detailed information regarding field-carrier interactions, semicon
ductor substrate loss and nonlinearity, as well as slow-wave effect, extern
al bias effect, and screening effect of the charged carriers. An equivalent
circuit model of MIS interconnects is established using an energy-based ap
proach. The model consists of an equivalent transmission line that mimics t
he energy transport characteristics of the actual MIS interconnect, and pro
vides a generalized nonlinear and electronic tunable circuit model suitable
for both small-signal and large-signal analysis. Examples are presented to
illustrate capabilities and efficiency of the method as well as properties
of the equivalent circuit model.