Low-frequency noise in polymer transistors

The low-frequency noise (LFN) properties of field-effect transistors (FETs) using polymers as the semiconducting substrate material are investigated a nd explained in terms of the nonstationary mobility mu in the semiconductin g polymer. In the frequency (f) range f < 1 kHz it was found that 1/f noise prevails over other types of LFN in these polymer FETs (PFETs), The spectr al density S-I of LFN of the drain current ID is proportional to the DC pow er V-DS II, applied to the PFETs channel, from the ohmic to the saturation modes of device operation. In addition, Sr is affected by the carrier mobil ity mu in PFETs channel, as mu in organic FETs is dependent on the biasing. Thus, S-I can have an additional sensitivity to I-D, that is, S-I proporti onal to (V-DS (.) I-D)(1-k), where k similar to 0.1, In general, the 1/f LF N of PFETs follows the relations that have been obtained for crystal and in organic FETs with minor correction for nonstationary mobility mu.