A detailed investigation of the quantum yield experiment

Citation
D. Ielmini et al., A detailed investigation of the quantum yield experiment, IEEE DEVICE, 48(8), 2001, pp. 1696-1702
Citations number
34
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
48
Issue
8
Year of publication
2001
Pages
1696 - 1702
Database
ISI
SICI code
0018-9383(200108)48:8<1696:ADIOTQ>2.0.ZU;2-W
Abstract
A detailed investigation of the quantum yield (QY) experiment is proposed, Experimental data show that no correlation exists between the QY and the st ress-induced leakage current (SILC), and that the QY is determined by high- energy oxide traps, Numerical simulations are then used, based on a detaile d calculation of the oxide defect distribution. It is shown that the leakag e current and the excess impact ionization component are due to trap-assist ed tunneling (TAT) of electrons through different sets of traps: Deep level s are responsible for the SILC, while high-energy states determine the impa ct ionization current. Simulation results are in good agreement with experi ments, showing that the QY results cannot be used to extract the energy los s of the SILC electrons.