A novel double ion-implant (DII) Ti-salicide technology for high-performance sub-0.25-mu m CMOS devices applications

A novel double ion-implant (DII) Ti-salicide technology combined by As pre- amorphization implant (PAI) plus Si ion-mixing implant without the addition al lithography process has been developed successfully and reported. Based on this technology, the good performances of uniform Ti-silicide formation, low and narrow distribution of sheet resistances both on n(+)/p(+) poly-ga te and source/drain (S/D) diffusion layers, and lower leakage currents in t he n(+)/p-well and p(+)/n-well junctions are obtained simultaneously. In ad dition, excellent behavior of a 0.24-mum NMOSFET and PMOSFET fabricated by this technology are also achieved.