Suppression of boron transient-enhanced diffusion in SiGeHBTs by a buried carbon layer

Authors
Jouan, S Baudry, H Dutartre, D Fellous, C Laurens, M Lenoble, D Marty, M Monroy, A Perrotin, A Ribot, P Vincent, G Chantre, A
Citation
S. Jouan et al., Suppression of boron transient-enhanced diffusion in SiGeHBTs by a buried carbon layer, IEEE DEVICE, 48(8), 2001, pp. 1765-1769
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
48
Issue
8
Year of publication
2001
Pages
1765 - 1769
Database
ISI
SICI code
0018-9383(200108)48:8<1765:SOBTDI>2.0.ZU;2-M
Abstract
The experiments described in this paper show that base broadening effects d ue to extrinsic base implantation in SiGe HBTs can be suppressed by introdu cing a buried carbon layer under the SiGe/Si base prior to epitaxy. They al so demonstrate that SiGe HBTs with excellent static (beta X V-AF similar to 10(4) V) and dynamic (f(T) X BVCE0 similar to 200 GHz X V) characteristics can be fabricated using an epitaxially aligned in-situ-doped polysilicon e mitter and an appropriately designed SiGe/Si base profile.