Dielectric pockets - A new concept of the junctions for deca-nanometric CMOS devices

Authors
Jurczak, M Skotnicki, T Gwoziecki, R Paoli, M Tormen, B Ribot, P Dutartre, D Monfray, S Galvier, J
Citation
M. Jurczak et al., Dielectric pockets - A new concept of the junctions for deca-nanometric CMOS devices, IEEE DEVICE, 48(8), 2001, pp. 1770-1775
Citations number
17
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON ELECTRON DEVICES
ISSN journal
00189383 → ACNP
Volume
48
Issue
8
Year of publication
2001
Pages
1770 - 1775
Database
ISI
SICI code
0018-9383(200108)48:8<1770:DP-ANC>2.0.ZU;2-2
Abstract
A new concept of dielectric pockets is proposed allowing suppression of sho rt-channel effects (SCEs) and DIBL without increasing the channel doping. T he dielectric pockets have been implanted into 0.15-mum PMOS devices showin g substantial efficiency in reducing SCE and I-OFF current without altering the current drive. The dielectric pockets thus embody the ideal pocket arc hitecture.