IN-SITU IMPEDANCE SPECTROSCOPY OF SILICON ELECTRODES DURING THE FIRSTSTAGES OF POROUS SILICON FORMATION

Citation
Gs. Popkirov et S. Ottow, IN-SITU IMPEDANCE SPECTROSCOPY OF SILICON ELECTRODES DURING THE FIRSTSTAGES OF POROUS SILICON FORMATION, Journal of electroanalytical chemistry [1992], 429(1-2), 1997, pp. 47-54
Citations number
48
Categorie Soggetti
Electrochemistry,"Chemistry Analytical
Journal title
Journal of electroanalytical chemistry [1992]
ISSN journal
15726657 → ACNP
Volume
429
Issue
1-2
Year of publication
1997
Pages
47 - 54
Database
ISI
SICI code
Abstract
Time-resolved in situ electrochemical impedance spectroscopy measureme nts were performed in HF-electrolyte during the initial stages of nano - and mesoporous layer formation on p-Si and p(+)-Si electrodes respec tively. A simple electrical equivalent circuit which involves a consta nt phase element to account for the distributed nature of the interfac ial capacitance was chosen to model the impedance behaviour of the Si electrode. The experimental impedance spectra obtained were subjected to data validation and were then used to estimate the circuit paramete rs. Their time dependence is discussed in terms of the porous silicon growth mechanism. (C) 1997 Elsevier Science S.A.