Effect of long-term heat treatment on the acceptor behavior of gold in silicon

Data are presented on the electrical activity of Au in Czochralski Si heat- treated and diffusion-doped under various conditions. The results are inter preted in terms of force fields responsible for changes in the concentratio n of electrically active centers. Long-term heat treatment between 700 and 1050 degreesC is shown to have a significant effect on the acceptor behavio r of Au in diffusion-doped Si. The concentration of Au acceptors is sensiti ve to the surface condition in the course of heat treatment: a tungsten coa ting increases the Au concentration in the bulk of diffusion-doped Si.