Theoretical analysis of the effect of amplified luminescence on the modulation response of laser diodes

A theoretical framework is established for the investigation of the effect of amplified luminescence, non-radiative recombination, photon losses, and gain non-linearity on the threshold current characteristics and small-signa l modulation responses of bulk and quantum-well (QW) 1.3 and 1.55 mum InxGa 1-xAsyP1-y/InP laser diodes. It is shown that the rate of recombination ind uced by amplified luminescence exhibits a highly non-linear dependence on b oth carrier concentration and temperature. Amplified luminescence and Auger recombination increase the laser threshold and contribute strongly to the device threshold current temperature sensitivity. Amplified luminescence an d Auger recombination are shown to have a significant detrimental effect on the modulation properties of long-wavelength laser diodes. Copyright (C) 2 001 John Wiley & Sons, Ltd.