Characterization of Cu0.5Ag0.5InSe2 thin films

Cu0.5Ag0.5InSe2 thin films prepared by the flash evaporation technique onto Coming 7059 glass substrates at T-s=683-703 K were single phase, nearly st oichiometric and polycrystalline with a strong (112) preferred orientation. The electrical resistivity of the films was in the range 30-300 Omega cm. Thermoelectric power and Hall effect measurements indicated p-type conducti on in the films. The temperature dependence of the electrical conductivity suggested that above 455 K the conduction mechanism was intrinsic, whereas extrinsic/impurity conduction dominated in the range 303-433 K. (C) 2001 El sevier Science B.V. All rights reserved.