Citation
Cx. Wang et al., Influence of growth parameters on crack density in thick epitaxially lateral overgrown GaN layers by hydride vapor phase epitaxy, J CRYST GR, 230(3-4), 2001, pp. 377-380
Citations number
11
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248
→ ACNP
Volume
230
Issue
3-4
Year of publication
2001
Pages
377 - 380
Database
ISI
SICI code
0022-0248(200109)230:3-4<377:IOGPOC>2.0.ZU;2-I
Abstract
Using hydride vapor phase epitaxy the influence of growth parameters on the
crack density is studied for thick epitaxially lateral overgrown (ELOG) Ga
N layers. Reactor pressure, growth rate, and substrate temperature are key
factors to obtain crack-free thick GaN layers. The cracking mechanism is di
scussed and void formation on top of the SiO2 stripes is proposed to play a
key role in stress relaxation and crack suppression. (C) 2001 Published by
Elsevier Science B.V.